Pure and Applied Chemistry, 2010, Volume 82, No. 6, pp. 1301-1315, References

Pure Appl. Chem., 2010, Vol. 82, No. 6, pp. 1301-1315

http://dx.doi.org/10.1351/PAC-CON-09-11-02

Published online 2010-05-04

Experimental and modeling study of O and Cl atoms surface recombination reactions in O₂ and Cl₂ plasmas

Luc Stafford¹*, Joydeep Guha^2,3, Rohit Khare², Stefano Mattei¹, Olivier Boudreault¹, Boris Clain¹ and Vincent M. Donnelly²

¹ Department of Physics, University of Montréal, Montréal, Québec, H3C 3J7, Canada
² Department of Chemical and Biomolecular Engineering, University of Houston, Houston, TX 77204, USA
³ Lam Research Corporation, Fremont, CA 94538, USA

References

1. F. Dreux, S. Marais, F. Poncin-Epaillard, M. Metayer, M. Labbé. Langmuir 18, 10411 (2002). (http://dx.doi.org/10.1021/la020584d)
2. D. A. Carl, D. W. Hess, M. A. Lieberman. J. Appl. Phys. 68, 1859 (1990). (http://dx.doi.org/10.1063/1.346598)
3. C. J. Mogab, A. C. Adams, D. L. Flamm. J. Appl. Phys. 49, 3796 (1978). (http://dx.doi.org/10.1063/1.325382)
4. S. Samukawa. Appl. Phys. Lett. 68, 316 (1996). (http://dx.doi.org/10.1063/1.116071)
5. R. Ramos, G. Cunge, O. Joubert, T. Lill. J. Vac. Sci. Technol. B 27, 113 (2009). (http://dx.doi.org/10.1116/1.3058710)
6. L. Sha, J. P. Chang. J. Vac. Sci. Technol. A 22, 88 (2004). (http://dx.doi.org/10.1116/1.1627771)
7. W. T. Lim, L. Stafford, J. I. Song, J. S. Park, Y. W. Heo, J. H. Lee, J. J. Kim, S. J. Pearton. Appl. Surf. Sci. 253, 2752 (2006). (http://dx.doi.org/10.1016/j.apsusc.2006.05.052)
8. P.-M. Bérubé, J.-S. Poirier, J. Margot, L. Stafford, P. F. Ndione, M. Chaker, R. Morandotti. J. Appl. Phys. 106, 063302 (2009). (http://dx.doi.org/10.1063/1.3223350)
9. L. Stafford, J. Margot, O. Langlois, M. Chaker. J. Vac. Sci. Technol. A 21, 1247 (2003). (http://dx.doi.org/10.1116/1.1577130)
10. J. J. Wang, J. R. Childress, S. J. Pearton, F. Sharifi, K. H. Dahmen, E. S. Gillman, F. J. Cadieu, R. Rani, X. R. Qian, C. Li. J. Electrochem. Soc. 145, 2512 (1998). (http://dx.doi.org/10.1149/1.1838670)
11. A. P. Mahorowala, H. H. Sawin. J. Vac. Sci. Technol. B 20, 1077 (2002). (http://dx.doi.org/10.1116/1.1481868)
12. C. Lee, D. B. Graves, M. A. Lieberman. Plasma Chem. Plasma Processing 16, 99 (1996). (http://dx.doi.org/10.1007/BF01465219)
13. M. L. Brake, R. L. Kerber. Plasma Chem. Plasma Processing 3, 79 (1983). (http://dx.doi.org/10.1007/BF00566029)
14. S. C. Deshmukh, D. J. Economou. J. Appl. Phys. 72, 4597 (1992). (http://dx.doi.org/10.1063/1.352113)
15. C. M. Lee, M. A. Lieberman. J. Vac. Sci. Technol. A 13, 368 (1995). (http://dx.doi.org/10.1116/1.579366)
16. J. P. Booth, N. Sadeghi. J. Appl. Phys. 70, 611 (1991). (http://dx.doi.org/10.1063/1.349662)
17. S. Gomez, P. G. Steen, W. G. Graham. Appl. Phys. Lett. 81, 19 (2002). (http://dx.doi.org/10.1063/1.1490630)
18. M. Mozetic, A. Zalar. Appl. Surf. Sci. 158, 263 (2000). (http://dx.doi.org/10.1016/S0169-4332(00)00007-6)
19. G. P. Kota, J. W. Coburn, D. B. Graves. J. Vac. Sci. Technol. A 16, 270 (1998). (http://dx.doi.org/10.1116/1.580982)
20. M. V. Malyshev, V. M. Donnelly, A. Kornblit, N. A. Ciampa. J. Appl. Phys. 84, 137 (1998). (http://dx.doi.org/10.1063/1.368010)
21. L. Stafford, J. Margot, F. Vidal, M. Chaker, K. Giroux, J. S. Poirier, A. Quintal-Léonard, J. Saussac. J. Appl. Phys. 98, 063301 (2005). (http://dx.doi.org/10.1063/1.2037873)
22. M. V. Malyshev, V. M. Donnelly. J. Appl. Phys. 88, 6207 (2000). (http://dx.doi.org/10.1063/1.1321777)
23. G. W. Lee, Y. B. Kang. Electrochem. Solid State Lett. 6, G49 (2003). (http://dx.doi.org/10.1149/1.1554294)
24. K. Miwa, T. Mukai. J. Vac. Sci. Technol. B 20, 2120 (2002). (http://dx.doi.org/10.1116/1.1511216)
25. G. Cunge, O. Joubert, N. Sadeghi. J. Appl. Phys. 94, 6285 (2003). (http://dx.doi.org/10.1063/1.1619575)
26. A. Agarwal, M. J. Kushner. J. Vac. Sci. Technol. A 26, 498 (2008). (http://dx.doi.org/10.1116/1.2909966)
27. T. W. Kim, E. S. Aydil. J. Electrochem. Soc. 150, G418 (2003). (http://dx.doi.org/10.1149/1.1578481)
28. P. F. Kurunczi, J. Guha, V. M. Donnelly. J. Phys. Chem. B 109, 20989 (2005). (http://dx.doi.org/10.1021/jp054190h)
29. P. F. Kurunczi, J. Guha, V. M. Donnelly. Phys. Rev. Lett. 96, 018306-1 (2006). (http://dx.doi.org/10.1103/PhysRevLett.96.018306)
30. J. Guha, Y.-K. Pu, V. M. Donnelly. J. Vac. Sci. Technol. A 25, 347 (2006). (http://dx.doi.org/10.1116/1.2699167)
31. J. Guha, V. M. Donnelly, Y.-K. Pu. J. Appl. Phys. 103, 013306 (2008). (http://dx.doi.org/10.1063/1.2828154)
32. L. Stafford, J. Guha, V. M. Donnelly. J. Vac. Sci. Technol. A 26, 455 (2008). (http://dx.doi.org/10.1116/1.2902953)
33. J. Guha, P. Kurunczi, L. Stafford, V. M. Donnelly, Y.-K. Pu. J. Phys. Chem. C 112, 8963 (2008). (http://dx.doi.org/10.1021/jp800788a)
34. L. Stafford, R. Khare, J. Guha, V. M. Donnelly, J.-S. Poirier, J. Margot. J. Phys. D: Appl. Phys. 42, 055206 (2009). (http://dx.doi.org/10.1088/0022-3727/42/5/055206)
35. J. Guha, R. Khare, L. Stafford, V. M. Donnelly, S. Sirard, E. A. Hudson. J. Appl. Phys. 105, 113309 (2009). (http://dx.doi.org/10.1063/1.3143107)
36. J. Guha, V. M. Donnelly. J. Appl. Phys. 105, 113307 (2009). (http://dx.doi.org/10.1063/1.3129543)
37. J. Guha, V. M. Donnelly. J. Vac. Sci. Technol. A 27, 515 (2009). (http://dx.doi.org/10.1116/1.3106608)
38. Y. C. Kim, M. Boudart. Langmuir 7, 2999 (1991). (http://dx.doi.org/10.1021/la00060a016)
39. G. P. Kota, J. W. Coburn, D. B. Graves. J. Vac. Sci. Technol. A 16, 270 (1998). (http://dx.doi.org/10.1116/1.580982)
40. V. Guerra. IEEE Trans. Plasma Sci. 35, 1397 (2007). (http://dx.doi.org/10.1109/TPS.2007.902028)
41. J. C. Greaves, J. W. Linnett. Trans. Faraday Soc. 55, 1346 (1959). (http://dx.doi.org/10.1039/tf9595501346)
42. P. G. Dickens, M. B. Sutcliffe. Trans. Faraday Soc. 60, 1272 (1964). (http://dx.doi.org/10.1039/tf9646001272)
43. C.-C. Hsu, M. A. Nierode, J. W. Coburn, D. B. Graves. J. Phys. D 39, 3272 (2006). (http://dx.doi.org/10.1088/0022-3727/39/15/009)
44. H. Singh, J. W. Coburn, D. B. Graves. J. Appl. Phys. 88, 3748 (2000). (http://dx.doi.org/10.1063/1.1289046)
45. M. W. Kiehlbauch, D. B. Graves. J. Vac. Sci. Technol. A 21, 660 (2003). (http://dx.doi.org/10.1116/1.1564024)
46. M. Mozetic, A. Zalar. Appl. Surf. Sci. 158, 263 (2000). (http://dx.doi.org/10.1016/S0169-4332(00)00007-6)
47. J. Matsushita, K. Sasaki, K. Kadota. Jpn. J. Appl. Phys. 36, Part 1, 4747 (1997).
48. G. Cunge, N. Sadeghi, R. Ramos. J. Appl. Phys. 102, 093305 (2007). (http://dx.doi.org/10.1063/1.2803881)
49. S. Imai. J. Vac. Sci. Technol. A 27, 1 (2009). (http://dx.doi.org/10.1116/1.3006029)
50. E. A. Hudson, S. Sirard. Unpublished.
51. G. Delgadino, D. Keil, J. Booth, C. Lee. Proceedings of the Dry Process International Symposium, Vol. 13 (unpublished) (2007).
52. J. Valyon, W. K. Hall. J. Phys. Chem. 97, 7054 (1993). (http://dx.doi.org/10.1021/j100129a021)
53. M. Iwamoto, H. Yahiro, K. Tanda, N. Mizuno, Y. Mine, S. Kagawa. J. Phys. Chem. 95, 3727 (1991). (http://dx.doi.org/10.1021/j100162a053)
54. D.-J. Liu, H. J. Robota. Catal. Lett. 21, 291 (1993). (http://dx.doi.org/10.1007/BF00769481)
55. J. Valyon, W. S. Millman, W. K. Hall. Catal. Lett. 24, 215 (1994). (http://dx.doi.org/10.1007/BF00811794)
56. J. O. Petunchi, W. K. Hall. J. Catal. 78, 327 (1982). (http://dx.doi.org/10.1016/0021-9517(82)90317-7)
57. S. J. Ullal, A. R. Godfrey, E. Edelberg, L. Braly, V. Vahedi, E. S. Aydil. J. Vac. Sci. Technol. A 20, 43 (2002). (http://dx.doi.org/10.1116/1.1421602)
58. S. J. Ullal, H. Singh, V. Vahedi, E. S. Aydil. J. Vac. Sci. Technol. A 20, 499 (2002). (http://dx.doi.org/10.1116/1.1450578)
59. A. D. Tserepi, T. A. Miller. J. Appl. Phys. 77, 505 (1995). (http://dx.doi.org/10.1063/1.359032)
60. L. Stafford, J. Margot, M. Chaker, O. Pauna. J. Appl. Phys. 93, 1907 (2003). (http://dx.doi.org/10.1063/1.1538313)
61. V. M. Donnelly, M. V. Malyshev. Appl. Phys. Lett. 77, 2467 (2000). (http://dx.doi.org/10.1063/1.1318727)
62. V. M. Donnelly. J. Vac. Sci. Technol. A 14, 1076 (1996). (http://dx.doi.org/10.1116/1.580137)
63. C. S. Corr, E. Despiau-Pujo, P. Chabert, W. G. Graham, F. G. Marro, D. B. Graves. J. Phys. D: Appl. Phys. 41, 185202 (2008). (http://dx.doi.org/10.1088/0022-3727/41/18/185202)
64. A. D. Richards, H. H. Sawin. J. Appl. Phys. 62, 799 (1987). (http://dx.doi.org/10.1063/1.339735)
65. M. Moisan, Z. Zakrzewski. J. Phys D: Appl. Phys. 24, 1025 (1991). (http://dx.doi.org/10.1088/0022-3727/24/7/001)
66. L. Stafford, R. Khare, V. M. Donnelly, J. Margot, M. Moisan. Appl. Phys. Lett. 94, 021503 (2009). (http://dx.doi.org/10.1063/1.3072364)
67. J. Margot-Chaker, M. Moisan, Z. Zakrzewski, V. M. Galude, G. Sauvé. Radio Sci. 23, 1120 (1988). (http://dx.doi.org/10.1029/RS023i006p01120)
68. V. M. Donnelly. J. Phys. D: Appl. Phys. 37, R217 (2004). (http://dx.doi.org/10.1088/0022-3727/37/19/R01)
69. E. A. Ogryzlo. Can. J. Chem. 39, 2556 (1961). (http://dx.doi.org/10.1139/v61-337)
70. S. Wickramanayaka, N. Hosokawa, Y. Hatanaka. Jpn. J. Appl. Phys. 30, 2897 (1991). (http://dx.doi.org/10.1143/JJAP.30.2897)

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Experimental and modeling study of O and Cl atoms surface recombination reactions in O₂ and Cl₂ plasmas

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Experimental and modeling study of O and Cl atoms surface recombination reactions in O2 and Cl2 plasmas

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Experimental and modeling study of O and Cl atoms surface recombination reactions in O₂ and Cl₂ plasmas